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Emeritus Professor Jin Zou

Emeritus Professor

School of Mechanical and Mining Engineering
Faculty of Engineering, Architecture and Information Technology
j.zou@uq.edu.au

Overview

Jin Zou is a Emeritus Professor in the School of Mechanical and Mining Engineering (Materials Engineering) and an affiliated Professor in the Centre for Microscopy and Microanalysis at the University of Queensland, Australia. Professor Zou earned his Masters degree from the University of Science and Technology, Beijing in 1985 and PhD from the University of Sydney in 1994. Through his postgraduate studies, Professor Zou was trained as a transmission electron microscopist. After his PhD, he worked in the Australian Key Centre for Microscopy and Microanalysis at the University of Sydney for 10 years with several Australian fellowships, including an Australian Postdoctoral fellowship and a Queen Elizabeth II fellowship. Professor Zou moved to UQ to take up a teaching-and-research position from July 2003. In 2009, Professor Zou won an inaugural ARC Future Fellowship (FT3 - Professor level). In 2021, Professor Zou became a Emeritus Professor.

Over the years, Professor Zou's research interest has been focused on the understanding of the evolution of advanced, smart and nano-scaled materials and the understanding of fundamental properties of these materials through detailed correlating their fabrication and demonstrated properties with their morphological, structural and chemical characteristics (determined by electron microscopy); and on the formation of high-performance functional nanomaterials and their advanced applications, particular in the fields of energy and environmental protection. So far, Professor Zou published nearly 700 SCI articles with most of them published in leading international journals, which have attracted over 26,500 citations and led to an H-indecx of 78.

Qualifications

  • PhD, The University of Sydney
  • MEng, U.S.T Beijing
  • BSc, U.S.T Beijing

Publications

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Grants

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Supervision

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Publications

Book Chapter

  • Synthesis of thermoelectric materials

    Hong, Min, Zou, Jin and Chen, Zhi-Gang (2021). Synthesis of thermoelectric materials. Thermoelectricity and Advanced Thermoelectric Materials. (pp. 73-103) edited by Ranjan Kumar and Ranber Singh. Duxford, United Kingdom: Elsevier. doi: 10.1016/B978-0-12-819984-8.00010-2

  • Thermo-responsive nanomaterials for thermoelectric generation

    Liu, Wei-Di, Zou, Jin and Chen, Zhi-Gang (2020). Thermo-responsive nanomaterials for thermoelectric generation. Responsive nanomaterials for sustainable applications. (pp. 269-293) edited by Ziqi Sun and Ting Liao . Cham, Switzerland: Springer. doi: 10.1007/978-3-030-39994-8_9

  • High-performance thermoelectric materials for solar energy application

    Yang, Lei, Chen, Zhi-Gang and Zou, Jin (2018). High-performance thermoelectric materials for solar energy application. Emerging materials for energy conversion and storage. (pp. 3-38) edited by Kuan Yew Cheong, Giuliana Impellizzeri and Mariana Amorim Fraga. Amsterdam, Netherlands: Elsevier. doi: 10.1016/B978-0-12-813794-9.00001-6

  • Ge1-x Mnx-diluted magnetic semiconductor nanostructures for spintronics

    Wang, Yong, Xiu, Faxian, Zou, Jin and Wang, Kang L. (2016). Ge1-x Mnx-diluted magnetic semiconductor nanostructures for spintronics. Mass transport of nanocarriers. (pp. 693-732) edited by Rita Elena Serda. Boca Raton, FL, United States: Pan Stanford Publishing.

  • Layer-structured thermoelectric materials: fundamentals, strategies and progress

    Chen, Zhi-Gang and Zou, Jin (2016). Layer-structured thermoelectric materials: fundamentals, strategies and progress. Two-dimensional nanostructures for energy-related applications. (pp. 23-47) edited by Kuan Yew Cheong. Boca Raton, FL, United States: CRC Press. doi: 10.1201/9781315369877

  • Fabrication, characterization, and application of boron nitride nanomaterials

    Chen, Zhi-Gang, Zou, Jin and Cheng, Hui-Ming (2015). Fabrication, characterization, and application of boron nitride nanomaterials. Nanotubes and nanosheets: functionalization and applications of boron nitride and other nanomaterials. (pp. 91-111) edited by Ying (Ian) Chen. Boca Raton, FL, United States: CRC Press. doi: 10.1201/b18073-6

  • Growth and characterization of GaAs nanowires grown on Si substrates

    Kang, Jung-Hyun, Gao, Qiang, Tan, Hark Hoe, Joyce, Hannah J., Kim, Yong, Guo, Yanan, Xu, Hongyi, Zou, Jin, Fickenscher, Melodie A., Smith, Leigh M., Jackson, Howard E., Yarrison-Rice, Jan M. and Jagadish, Chennupati (2013). Growth and characterization of GaAs nanowires grown on Si substrates. Nanoelectronic device applications handbook. (pp. 603-613) edited by James E. Morris and Krzysztof Iniewski. Boca Raton, FL, United States: CRC Press. doi: 10.1201/b15035

  • Ge1-x Mnx-diluted magnetic semiconductor nanostructures for spintronics

    Wang, Yong, Xiu, Faxian, Zou, Jin and Wang, Kang L. (2012). Ge1-x Mnx-diluted magnetic semiconductor nanostructures for spintronics. Handbook of innovative nanomaterials: from syntheses to applications. (pp. 693-731) edited by Xiaosheng Fang and Limin Wu. Singapore: Pan Stanford Publishing. doi: 10.4032/9789814303903

  • Ge1-xMnx diluted magnetic semiconductor nanostructures for spintronics

    Wang, Yong, Xiu, Faxian, Zou, Jin and Wang, Kang L. (2012). Ge1-xMnx diluted magnetic semiconductor nanostructures for spintronics. Handbook of innovative nanomaterials: from synthesis to applications. (pp. 693-732) edited by Xiaosheng Fang and Limin Wu. Singapore: Pan Stanford Publishing.

  • Magnetic MnxGe1-x dots for spintronics applications

    Xiu, Faxian, Wang, Yong, Zou, Jin and Wang, Kang L. (2012). Magnetic MnxGe1-x dots for spintronics applications. Quantum dots: a variety of new applications. (pp. 153-182) edited by Ameenah Al-Ahmadi. Rijeka, Croatia: InTech. doi: 10.5772/2645

  • Advanced transmission electron microscopy characterization of semiconductor quantum structures

    Zou, J, Liao, X, Keast, V J and Cockayne, D J H (2006). Advanced transmission electron microscopy characterization of semiconductor quantum structures. Handbook of Semiconductor Nanostructures and Nanodevices. Volume 2. (pp. 61-92) edited by A A Balandin and K L Wang. USA: American Scientific Publishers.

  • Structures of epitaxial quantum dots

    Liao, X. Z., Zou, J. and Cockayne, D. J. H. (2006). Structures of epitaxial quantum dots. Encyclopedia of Nanoscience and Nanotechnology. (pp. 175-189) edited by A. A. Balandin and K. L. Wang. USA: American Scientific Publishers.

  • Transmission electron microscopy investigation of semi conductor quantum dots

    Zou, J. and Liao, X. Z. (2003). Transmission electron microscopy investigation of semi conductor quantum dots. 透射电子显微学进展. (pp. 552-574) edited by Hengqiang Ye and Yuanming Wang. Bejing, China: Science Press.

  • Transmission electron microscopy investigations of misfit dislocations in lattice mismatched semiconductor heterostructures

    Zou, J. and Cockayne, D. J. H. (2001). Transmission electron microscopy investigations of misfit dislocations in lattice mismatched semiconductor heterostructures. Progress in Transmission electron Microscopy 2: Applications in Materials Science. (pp. 247-266) edited by Xiao-Feng Zhang and Ze Zhang. Berlin, Germany: Springer.

Journal Article

Conference Publication

  • The study of atmospheric pressure CVD growth process of MoxW1-xTe2 nanobelts for tuneable chemical composition

    Liu, Shijian, Qiu, Haipeng, Liu, Shanhua, Zou, Jin and Chen, Zhigang (2019). The study of atmospheric pressure CVD growth process of MoxW1-xTe2 nanobelts for tuneable chemical composition. 11th International Conference on High-Performance Ceramics, Kunming, China, 25–29 May 2019. Institute of Physics Publishing. doi: 10.1088/1757-899X/678/1/012149

  • Critical analysis of non-metallic inclusions in al and Si-deoxidized spring steels

    Lyu, S., Ma, X., Wang, G., Zou, J., Lee, H. G., Zhao, B., Huang, Z., Yao, Z. and Jiang, Z. (2018). Critical analysis of non-metallic inclusions in al and Si-deoxidized spring steels. 7th International Congress on Science and Technology of Steelmaking, ICS 2018, Venice, Italy, 13-15 June 2018. Milano, Italy: Associazione Italiana di Metallurgia.

  • Thickness dependence of internal stress in electrodeposited nano-twinned copper

    Zhan, S., Yang, Y. L., Peng, W. Y., Chen, J. G., Li, Z. B., Hou, X. J., Feng, L., Suo, G. Q., Chen, Z. G., Zou, J. and Wang, Y. D. (2018). Thickness dependence of internal stress in electrodeposited nano-twinned copper. *, *, *. Sofia, Bulgaria: Bulgarian Academy of Sciences.

  • Formation mechanisms of inclusions in spring steels

    Sha, Lv, Huang, Zongzhe, Yao, Zan, Ma, Xiaodong, Wang, Geoff, Zou, Jin and Zhao, Baojun (2017). Formation mechanisms of inclusions in spring steels. 8th International Symposium on High-Temperature Metallurgical Processing, San Diego Ca, 26 February - 2 March 2017. Cham, Switzerland: Springer Nature. doi: 10.1007/978-3-319-51340-9_32

  • Specifying fly ash for use in geopolymer: a conception of reactivity index

    Wang, Hao, Zhang, Zuhua, Provis, John L. and Zou, Jin (2015). Specifying fly ash for use in geopolymer: a conception of reactivity index. 27th Biennial National Conference of the Concrete Institute of Australia in conjunction with the 69th RILEM Week, Melbourne, VIC, Australia, 30 August - 2 September 2015. North Sydney, NSW, Australia: Concrete Institute of Australia.

  • Au-catalyzed and catalyst-free growth of one-dimensional Bi2Se3 nanostructures

    Zou, Yichao, Chen, Zhi-Gang, Huang, Yang, Drennan, John and Zou, Jin (2014). Au-catalyzed and catalyst-free growth of one-dimensional Bi2Se3 nanostructures. Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Australia, 14-17 December 2014. Perth, WA, Australia: Institute of Electrical and Electronic Engineers. doi: 10.1109/COMMAD.2014.7038638

  • Effect of V/III ratio on the structural quality of InAs nanowires

    Zhang, Zhi, Lu, Zhen-Yu, Xu, Hong-Yi, Chen, Ping-Ping, Lu, Wei and Zou, Jin (2014). Effect of V/III ratio on the structural quality of InAs nanowires. Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Australia, 14-17 December 2014. Perth, WA, Australia: Institute of Electrical and Electronic Engineers. doi: 10.1109/COMMAD.2014.7038642

  • The Research on Ni-Based Ammonia Decomposition Catalyst

    Zou, Jin, Lu, De Ping and Zhai, Qi Jie (2014). The Research on Ni-Based Ammonia Decomposition Catalyst. International Conference on Machine Tool Technology and Mechatronics Engineering, Guilin, China, 22-23 June 2014. Pfaffikon, Switzerland: Trans Tech Publications. doi: 10.4028/www.scientific.net/amm.644-650.5364

  • The Research on Thermal Residual Stress of SiCp/Al Composites

    Zou, Jin, Zhang, Jian Yun, Lu, De Ping and Zhai, Qi Jie (2014). The Research on Thermal Residual Stress of SiCp/Al Composites. 3rd International Conference on Materials Science and Engineering, ICMSE 2014, Jiujiang, China, 24-26 January 2014. Pfaffikon, Switzerland: Trans Tech Publications. doi: 10.4028/www.scientific.net/amr.852.127

  • Palladium catalyzed defect-free 〈110〉 zinc-blende structured InAs nanowires

    Xu, Hongyi, Gao, Qiang, Hoe Tan, H., Jagadish, Chennupati and Zou, Jin (2013). Palladium catalyzed defect-free 〈110〉 zinc-blende structured InAs nanowires. 2013 MRS Spring Meeting, San Francisco, CA, 1 - 5 April 2013. Materials Research Society. doi: 10.1557/opl.2013.990

  • Effects of Au catalyst on GaAs (111)(B) surface during annealing

    Liao, Z. M., Xu, H. Y., Sun, W., Guo, Y. N., Yang, L., Chen, Z. G., Zou, J., Lu, Z. Y., Chen, P. P. and Lu, W. (2012). Effects of Au catalyst on GaAs (111)(B) surface during annealing. 2012 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD 2012), Melbourne, Australia, 12-14 December 2012. Piscataway, NJ, United States: I E E E. doi: 10.1109/COMMAD.2012.6472333

  • Growth of defect-free InAs Nanowires using Pd catalyst

    Xu, H. Y., Guo, Y. N., Liao, Z. M., Zou, J., Gao, Q., Tan, H. H. and Jagadish, C. (2012). Growth of defect-free InAs Nanowires using Pd catalyst. Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), Melbourne, Australia, 12-14 December 2012. Piscataway, NJ, United States: I E E E. doi: 10.1109/COMMAD.2012.6472345

  • Hydrogenation/dehydrogenation in MgH2-activated carbon composites prepared by ball milling

    Jia, Yi, Guo, Yanan, Zou, Jin and Yao, Xiangdong (2012). Hydrogenation/dehydrogenation in MgH2-activated carbon composites prepared by ball milling. 7th Petite Workshop on the Defect Chemical Nature of Energy Materials, Storaas, Kongsberg, Norway, 14-17 March 2011. Oxford, United Kingdom: Elsevier. doi: 10.1016/j.ijhydene.2012.01.015

  • Shell Formation in InGaAs Nanowires Driven by Lattice Latching and Polarity Effect

    Guo, Y., Zou, J., Burgess, T., Ga, Q., Tan, H. H. and Jagadish, C. (2012). Shell Formation in InGaAs Nanowires Driven by Lattice Latching and Polarity Effect. Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), Melbourne, Australia, 12-14 December 2012. Piscataway, NJ, United States: I E E E. doi: 10.1109/COMMAD.2012.6472355

  • Structural characteristics of GeMn diluted magnetic semiconductor nanostructures

    Zou, Jin, Wang, Yong, Xiu, Faxian, Zhao, Zuoming and Wang, Kang L. (2012). Structural characteristics of GeMn diluted magnetic semiconductor nanostructures. Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), Melbourne, Australia, 11-14December 2012. Piscataway, NJ United States: I E E E. doi: 10.1109/COMMAD.2012.6472336

  • Unequal P distribution in nanowires and the layer during the growth of GaAsP nanowires on GaAs

    Sun, W., Guo, Y. N., Xu, H. Y., Liao, Z. M., Zou, J., Gao, Q., Tan, H. H. and Jagadish, C. (2012). Unequal P distribution in nanowires and the layer during the growth of GaAsP nanowires on GaAs. Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), Melbourne Australia, 11-14December 2012. Piscataway, NJ United States: Institute of Electrical and Electronics Engineers. doi: 10.1109/COMMAD.2012.6472403

  • Enhanced physical compatibility in manganite/cuprate multilayer with high-quality interface

    Xie, Qiyun, Qian, Bin, Wu, Xiaoshan, Zou, Jin and Gao, Ju (2011). Enhanced physical compatibility in manganite/cuprate multilayer with high-quality interface. Lausanne, Switzerland: Elsevier S.A.. doi: 10.1016/j.tsf.2011.03.064

  • Compound semiconductor nanowires for optoelectronic device applications

    Gao, Q., Joyce, H., Paiman, S., Kang, J. H., Tan, H. H., Jackson, H. E., Smith, L. M., Yarrison-Rice, J. M., Zou, Jin and Jagadish, C. (2011). Compound semiconductor nanowires for optoelectronic device applications. IEEE. doi: 10.1109/ico-ip.2011.5953760

  • Direct Measure of Strain and Electronic Structure in GaAs/GaP Core-Shell Nanowires

    Jackson, H. E., Montazeri, M., Fickenscher, M., Smith, L. M., Yarrison-Rice, J. M., Kang, J. H., Gao, Q., Tan, H. H., Jagadish, C., Guo, Y., Zou, J., Pistol, M. E. and Pryor, C. E. (2011). Direct Measure of Strain and Electronic Structure in GaAs/GaP Core-Shell Nanowires. 30th International Conference on the Physics of Semiconductors (ICPS-30), Seoul, South Korea, 25-30 July 2010. Melville, NY, United States: A I P Publishing. doi: 10.1063/1.3666461

  • Epitaxial growth of Bi2Se3 topological insulator thin films on Si (111)

    He, Liang, Xiu, Faxian, Wang, Yong, Fedorov, Alexei V., Huang, Guan, Kou, Xufeng, Lang, Murong, Beyermann, Ward P., Zou, Jin and Wang, Kang L. (2011). Epitaxial growth of Bi2Se3 topological insulator thin films on Si (111). 30th International Conference on the Physics of Semiconductors (ICPS-30), Seoul, South Korea, 25-30 July 2010. College Park, MD, United States: American Institute of Physics. doi: 10.1063/1.3585673

  • Growth and characterization of III-V compound semiconductor nanowires

    Gao, Q., Tan, H. H., Jackson, H. E., Smith, L. M., Yarrison-Rice, J. M., Zou, J., Johnston, M. and Jagadish, C. (2011). Growth and characterization of III-V compound semiconductor nanowires. 16th Opto-Electronics and Communications Conference, OECC 2011, Kaohsiung, Taiwan, 4-8 July 2011. Piscataway, NJ United States: I E E E.

  • Growth and characterization of compound semiconductor nanowires on Si

    Gao, Q., Kang, J. H., Tan, H. H., Jackson, H. E., Smith, L. M., Yarrison-Rice, J. M., Zou, Jin and Jagadish, C. (2011). Growth and characterization of compound semiconductor nanowires on Si. 2011 11th IEEE International Conference on Nanotechnology, NANO 2011, Portland, OR United States, 15-19 August 2011. Piscataway, NJ, United States: IEEE. doi: 10.1109/NANO.2011.6144553

  • III-V compound semiconductor nanowires for optoelectronic devices

    Gao, Q., Tan, H. H., Jackson, H. E., Smith, L. M., Yarrison-Rice, J. M., Zou, Jin, Johnston, M. and Jagadish, C. (2011). III-V compound semiconductor nanowires for optoelectronic devices. Conference on Lasers and Electro-Optics/Pacific Rim 2011, Sydney, NSW, Australia, 28 August -1 September 2011. Washington, DC, United States: OSA Publishing.

  • Microstructures of YBa1.85Eu0.15Cu3O7-delta superconducting films grown on SrTiO3 and YSZ substrates

    Xie, Qiyun, Gu, Mingqiang, Qian, Bin, Wu, Xiaoshan, Jiang, Zhengsheng, Zou, Jin and Gao, Ju (2011). Microstructures of YBa1.85Eu0.15Cu3O7-delta superconducting films grown on SrTiO3 and YSZ substrates. 16th International Conference on Crystal Growth (ICCG16)/14th International Conference on Vapor Growth and Epitaxy (ICVGE14), Beijing, China, 8-13 August 2010. Amsterdam, Netherlands: Elsevier BV. doi: 10.1016/j.jcrysgro.2010.09.060

  • Probing the valence band structure of wurtzite InP nanowires by photoluminescence excitation spectroscopy

    Jackson, H. E., Perera, S., Pemasiri, K., Smith, L. M., Yarrison-Rice, J., Kang, J. H., Gao, Q., Tan, H. H., Jagadish, C., Guo, Y. and Zou, J. (2011). Probing the valence band structure of wurtzite InP nanowires by photoluminescence excitation spectroscopy. 30th International Conference on the Physics of Semiconductors, ICPS-30, Seoul, Korea, 25-30 July 2010. College Park, MD United States: American Institute of Physics. doi: 10.1063/1.3666463

  • Temperature and bias-assisted transport properties of LSMO/AlO/CoFeB magnetic tunnel junction

    Rizwan, Syed, Guo, S. M., Wang, Y., Wen, Z. C., Zhang, S., Zhao, Y. G., Zou, J. and Han, X. F. (2010). Temperature and bias-assisted transport properties of LSMO/AlO/CoFeB magnetic tunnel junction. doi: 10.1109/TMAG.2010.2045743

  • Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio

    Paiman, S., Gao, Q., Joyce, H.J., Tan, H.H., Jagadish, C., Kim, Y., Guo, Y. and Zou, J. (2010). Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio. 2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), Canberra, A.C.T., Australia, 12-15 December 2010. Piscataway, NJ, U.S.A.: IEEE Xplore. doi: 10.1109/COMMAD.2010.5699767

  • Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD

    Guo, Y., Zou, J., Joyce, H. J., Gao, Q., Tan, H. H. and Jagadish, C. (2010). Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD. 2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), Canberra, A.C.T., Australia, 12-15 December 2010. Piscataway, NJ, U.S.A.: IEEE Xplore. doi: 10.1109/COMMAD.2010.5699774

  • Growth of GaAs nanowires using different Au catalysts

    Xu, H.Y., Wang, Y., Guo, Y.N., Zou, J., Gao, Q., Tan, H.H. and Jagadish, C. (2010). Growth of GaAs nanowires using different Au catalysts. 2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), Canberra, A.C.T., Australia, 12-15 December 2010. Piscataway, NJ, U.S.A.: IEEE Xplore. doi: 10.1109/COMMAD.2010.5699766

  • Growth of ZnS heterostructures for optoelectronic applications

    Chen, Zhigang, Lu, G. Q. and Zou, J. (2010). Growth of ZnS heterostructures for optoelectronic applications. 2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMADD 2010), Canberra, Australia, 12-15 December 2010. Piscataway, NJ, U.S.A.: IEEE Xplore. doi: 10.1109/COMMAD.2010.5699747

  • Improvement of morphology, structure, and optical properties of GaAs nanowires grown on Si substrates

    Kang, Jung-Hyun, Gao, Qiang, Joyce, Hannah J., Tan, Hark Hoe, Jagadish, Chennupati, Kim, Yong, Guo, Yanan, Xu, Hongyi, Zou, Jin, Fickenscher, Melodie A., Smith, Leigh M., Jackson, Howard E. and Yarrison-Rice, Jan M. (2010). Improvement of morphology, structure, and optical properties of GaAs nanowires grown on Si substrates. 2010 10th IEEE Conference on Nanotechnology, NANO 2010, Ilsan, Gyeonggi-Do, South Korea, 17-20 August 2010. Piscataway, NJ, U.S.A.: Institute of Electrical and Electronic Engineers (IEEE). doi: 10.1109/NANO.2010.5697783

  • InP/InGaAs core-shell nanowire heterostructures: Growth and characterisation

    Ramesh, V., Gao, Q., Tan, H. H., Paiman, S., Guo, Y. N., Zou, J. and Jagadish, C. (2010). InP/InGaAs core-shell nanowire heterostructures: Growth and characterisation. 2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), Canberra, A.C.T., Australia, 12-15 December 2010. Piscataway, NJ, U.S.A.: IEEE Xplore. doi: 10.1109/COMMAD.2010.5699792

  • PVDF Nano-composites prepared by phase inversion technique and interface fine tune

    Hou, Meng, Tang, Xue-Gang, Zou, Jin, Truss, Rowan W. and Yang, Ming-Bo (2010). PVDF Nano-composites prepared by phase inversion technique and interface fine tune. The 7th Asian-Australian Conference on Composite Materials, Taipei, Taiwan, 15-18 November 2010.

  • PVDF nano-composites prepared by phase inversion technique and interface fine tune

    Hou, Meng, Tang, Xue-Gang, Zou, Jin, Truss, Rowan and Yang, Ming-Bo (2010). PVDF nano-composites prepared by phase inversion technique and interface fine tune. 7th Asian-Australasian Conference on Composite Materials 2010, ACCM 2010, , , November 15, 2010-November 18, 2010. ACCM-7 Organizing Committee.

  • Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates

    Kang, Jung-Hyun, Gao, Qiang, Joyce, Hannah J., Kim, Yong, Guo, Yanan, Xu, Hongyi, Zou, Jin, Fickenscher, Melody A., Smith, Leigh M., Jackson, Howard E., Yarrison-Rice, J. M., Tan, Hark Hoe and Jagadish, Chennupati (2010). Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates. 2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), Canberra, A.C.T., Australia, 12-15 December 2010. Piscataway, NJ, U.S.A.: IEEE Xplore. doi: 10.1109/COMMAD.2010.5699778

  • Thickness dependence of magnetic and transport properties in organic-CoFe discontinuous multilayers

    Wang, W. X., Wang, Y. P., Zhang, X. G., Wang, Y., Zou, J. and Han, X. F. (2010). Thickness dependence of magnetic and transport properties in organic-CoFe discontinuous multilayers. 11th Joint MMM-Intermag Conference, Washington, D.C., United States, 18-22 January 2010. College Park, MD, United States: American Institute of Physics. doi: 10.1063/1.3359438

  • ZnS nanostructures for field emitters

    Chen, Zhi-Gang, Zou, Jin and Lu, (Max) Gaoqing (2010). ZnS nanostructures for field emitters. 2010 International Conference on Nanoscience and Nanotechnology (ICONN 2010), Sydney, Australia, 22-26 Feb 2010. Piscataway, NJ, United States: IEEE. doi: 10.1109/ICONN.2010.6045161

  • Effect of the crystal structure on the optical properties of InP nanowires

    Paiman, S., Gao, Q., Tan, H. H., Jagadish, C., Pemasiri, K., Montazeri, M., Jackson, H. E., Smith, L. M., Yarrison-Rice, J. M., Zhang, X. and Zou, J. (2009). Effect of the crystal structure on the optical properties of InP nanowires. 2009 IEEE LEOS Annual Meeting Conference, LEOS '09, Belek-Antalya, Turkey, 4-8 October 2009. Piscataway, NJ United States: I E E E. doi: 10.1109/LEOS.2009.5343092

  • Epitaxy of III-V semiconductor nanowires towards optoelectronic devices

    Gao, Q., Joyce, H. J., Paiman, S., Tan, H. Hoe, Kim, Y., Smith, L. M., Jackson, H. E., Yarrison-Rice, J. M., Zhang, X., Zou, J. and Jagadish, C. (2009). Epitaxy of III-V semiconductor nanowires towards optoelectronic devices. 14th OptoElectronics and Communications Conference, OECC 2009, Hong Kong, China, 13-17 July 2009. Piscataway, NJ United States: I E E E. doi: 10.1109/OECC.2009.5219756

  • Fermi level depinning of Ge Schottky contacts using single crystalline MgO

    Zhoua, Yi, Han, Wei, Wang, Yong, Xiu, Faxian, Zou, Jin, Kawakami, R. K. and Wang, K. L. (2009). Fermi level depinning of Ge Schottky contacts using single crystalline MgO. 2009 International Semiconductor Device Research Symposium, ISDRS '09, College Park, MD United States, 9-11 December 2009. Piscataway, NJ United States: I E E E. doi: 10.1109/ISDRS.2009.5378328

  • III-V Compound Semiconductor Nanowires

    Paiman, S., Joyce, H. J., Kang, J. H., Gao, Q., Tan, H. H., Kim, Y., Zhang, X., Zou, J. and Jagadish, C. (2009). III-V Compound Semiconductor Nanowires. 9th IEEE Conference on Nanotechnology (IEEE-NANO), Genoa Italy, Jul 26-30, 2009. NEW YORK: IEEE.

  • III-V compound semiconductor nanowires

    Joyce, H. J., Paiman, S., Gao, Q., Tan, H. Hoe, Kim, Y., Smith, L. M., Jackson, H. E., Yarrison-Rice, J. M., Zhang, X., Zou, J. and Jagadish, C. (2009). III-V compound semiconductor nanowires. 2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009, Traverse City, MI United States, 2-5 June 2009. Piscataway, NJ United States: I E E E. doi: 10.1109/NMDC.2009.5167572

  • The Raman and IR spectroscopy study on the transition metal in ZnO

    Li, Y.J., Zhang, B., Wang, Y., Zou, J. and Lu, W. (2009). The Raman and IR spectroscopy study on the transition metal in ZnO. 34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009, Busan, Korea, 21-25 September 2009. Piscataway, NJ United States: I E E E. doi: 10.1109/ICIMW.2009.5325569

  • Deformation of monocrystalline silicon under nanoscratching

    Wu, Y., Huang, H, and Zou, J, (2008). Deformation of monocrystalline silicon under nanoscratching. Switzerland: Trans Tech Publications Ltd..

  • Direct evidence of a nanosized high pressure phase of silicon during nanogrinding

    Huang, H., Wang, B. L., Wang, Y., Wu, Y. Q., Zhou, L. and Zou, J. (2008). Direct evidence of a nanosized high pressure phase of silicon during nanogrinding. International Conference On Nanoscience and Nanotechnology (ICONN 2008), Melbourne, Australia, 25-29 February 2008.

  • Failure and formation of axial nanowire heterostructures in vapor-liquid-solid growth

    Paladugu, M., Zou, J., Guo, Y.-N., Auchterlonie, G. J., Joyce, H. J., Gao, Q., Tan, H. H., Jagadish, C. and Kim, Y. (2008). Failure and formation of axial nanowire heterostructures in vapor-liquid-solid growth. 2007 MRS Fall Meeting, Boston, MA, USA, 26-30 November, 2007. Warrendale, PA United States: Materials Research Society. doi: 10.1557/PROC-1058-JJ01-09

  • Free energies of low-indexed surfaces of anatase and rutile TiO2 terminated by non-metals

    Sun, C. H., Yang, H. G., Smith, S., Zhang, Q. S., Liu, G., Zou, J., Cheng, H. M. and Lu, G. Q. (2008). Free energies of low-indexed surfaces of anatase and rutile TiO2 terminated by non-metals. Nanotechnology Conference and Trade Show (Nanotech 2008), Boston, MA, United States, 1-5 June 2008. Boca Raton, FL, United States: CRC Press.

  • Growth behavior of epitaxial semiconductor axial nanowire heterostructures

    Zou, J., Paladugu, M., Guo, Y. N., Zhang, X., Auchterlonie, G. J., Joyce, H. J., Gao, Q., Tan, H. H., Jagadish, C. and Kim, Y. (2008). Growth behavior of epitaxial semiconductor axial nanowire heterostructures. Conference on Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008, Sydney, Australia, 28 July-1 September 2008. Piscataway, NJ, United States: IEEE. doi: 10.1109/COMMAD.2008.4802094

  • Growth, structural and optical properties of high quality gaAs nanowires for optoelectronics

    Joyce, Hannah J., Gao, Qiang, Kim, Yong, Tan, H. Hoe, Jagadish, Chennupati, Zhang, Xin, Guo, Yanan, Zou, Jin, Fickenscher, Melodie A., Perera, Saranga, Hoang, Thang B., Smith, Leigh M., Jackson, Howard E. and Yarrison-Rice, Jan M. (2008). Growth, structural and optical properties of high quality gaAs nanowires for optoelectronics. 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO, Arlington, TX United States, 18-21 August 2008. Piscataway, NJ United States: I E E E. doi: 10.1109/NANO.2008.25

  • Mn distribution in GeMn thin films grown on Ge and Si substrates

    Wang, Y., Zou, J., Zhao, Z. M., Han, X. H., Zhou, X. Y. and Kang, L. (2008). Mn distribution in GeMn thin films grown on Ge and Si substrates. International Union of Materials Research Societies - International Conference on Electronic Materials (IUMRS-ICEM 2008), Sydney, Australia, 28 July - 1 August 2008. Materials Research Society.

  • Optical properties of single InP and GaAs nanowire heterostructures

    Jackson, H. E., Perera, S., Fickenscher, M. A., Smith, L. M., Yarrison-Rice, J. M., Joyce, H. J., Gao, Q., Tan, H. H., Jagadish, C., Zhang, X. and Zou, J. (2008). Optical properties of single InP and GaAs nanowire heterostructures. 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008, Newport Beach, CA United States, 9-13 November 2008. Piscataway, NJ United States: I E E E. doi: 10.1109/LEOS.2008.4688673

  • Structural investigation of GeMn thin films grown on Ge and Si

    Han, X. H., Wang, K. L., Wang, Y., Zhao, Z. M., Zhou, X. Y. and Zou, J. (2008). Structural investigation of GeMn thin films grown on Ge and Si. Asia Pacific Microwave Conference 2008, Hong Kong; Macau, China, 16-19 December; 19-20, December 2008.

  • Advanced electron microscopy applications on inorganic nanomaterials

    Zou, J. (2007). Advanced electron microscopy applications on inorganic nanomaterials. International Conference of Nonferrous Materials, Changsha, China, 25 - 30 November, 2007.

  • Aggregation of Dopant Cations and their effect on Electrical Conductivity of Yttrium Doped Ceria

    Ou, D.R., Mori, T., Ye, F., Zou, J. and Drennan, J. (2007). Aggregation of Dopant Cations and their effect on Electrical Conductivity of Yttrium Doped Ceria. 1st International Congress on Ceramics: A Global Roadmap, Canada, 25-29 June 2006.

  • Asymmetrical lateral growth of GaAs nanowires

    Zou, J., Paladugu, M., Auchterlonie, G. J., Guo, Y. N., Kim, Y. and Jagadish, C. (2007). Asymmetrical lateral growth of GaAs nanowires. Materials Today Asia 2007, Beijing, 2007.

  • Composition Dependence of Electrical Conductivity of Ce1-xTbx02-8(0≤ x ≤ 1)

    Ye, F, Mori, T., Ou, D.R., Takahashi, M., Zou, J. and Drennan, J. (2007). Composition Dependence of Electrical Conductivity of Ce1-xTbx02-8(0≤ x ≤ 1). 1st International Congress on Ceramics: A Global Roadmap, Canada, 25-29 June 2006. OXFORD: PERGAMON-ELSEVIER SCIENCE LTD. doi: 10.1016/j.renene.2007.05.014

  • Defect Engineering in ZnO

    Coleman, Victoria Anne, Tan, Hark Hoe, Bradby, Jodie E., Buda, Manuela, Jagadish, C., Kucheyev, Sergei O., Zou, Jin and Phillips, Matthew R. (2007). Defect Engineering in ZnO. Symposium K: Zinc Oxide and Related Materials, Boston, MA, 27 Nov - 1 Dec, 2007. Maney Publishing.

  • Development strategy for new fuel cell materials

    Auchterlonie, G.J., Drennan, J. and Zou, J. (2007). Development strategy for new fuel cell materials. 16th International Conference on Solid State Ionics, Shanghai, 1-6 July, 2007. Shanghai: Elsevier B.V.. doi: 10.1016/j.ssi.2008.06.005

  • Faceted SiGe quantum dots and their stabilities

    Jiang, Z. M., Li, F. H., Lin, J. H., Wu, R., Wu, Y. Q. and Zou, J. (2007). Faceted SiGe quantum dots and their stabilities. Materials Today Asia, 2007, Beijing, China, 3 - 5 September, 2007.

  • Growth of Nano-sized Domains during Sintering Process and their Effect on the Conductivity of Ytterbium-Doped Ceria

    Ye, F., Mori, T., Ou, D. R., Zou, Jin and Drennan, John (2007). Growth of Nano-sized Domains during Sintering Process and their Effect on the Conductivity of Ytterbium-Doped Ceria. 10th International Conference and Exhibition of the European Ceramic Society, Estrel Convention Center, Berlin, Germany, 17-21 June 2007.

  • Growth of magnetic yard-glass shaped boron nitride nanotubes with periodic iron nanoparticles

    Chen, Z. G., Zou, J., Li, F., Cheng, H. M. and Lu, G. Q. (2007). Growth of magnetic yard-glass shaped boron nitride nanotubes with periodic iron nanoparticles. The 4th China-Korea Workshop on Nanotubes and Nanowires, Yanji, China, 27-30 May, 2007.

  • III-V compound semiconductor nanowires for optoelectronic applications

    Gao, Q., Joyce, H., Kim, Y., Tan, H. H., Jagadish, H., Wang, H., Guo, Y. N. and Zou, J. (2007). III-V compound semiconductor nanowires for optoelectronic applications. IWPSD 2007: 14th International Workshop on the Physics of Semiconductor Devices, Tata Institute of Fundamental Research; Indian Institute of Technology, Bombay, 16-20 December 2007. Los Alamitos, CA: Institute of Electrical and Electronics Engineers. doi: 10.1109/IWPSD.2007.4472514

  • Improved property of core/shell ZnS/BN nanowires

    Chen, Zhi-Gang, Zou, Jin, Lu, Gao Qing, Liu, Gang, Li, Feng and Cheng, Hui-Ming (2007). Improved property of core/shell ZnS/BN nanowires. Materials Today Asia 2007, Beijing, China, 3-5 September, 2007.

  • Influence of Sintering Processes on Microstructures and Electrical Properties of Yttrium-Doped Ceria

    Ou, D.R., Mori, T., Ye, F., Zou, J. and Drennan, J. (2007). Influence of Sintering Processes on Microstructures and Electrical Properties of Yttrium-Doped Ceria. The 24th International Japan-Korea Seminar on Ceramics, Shizuoka, Japan, 20-22 November 2007. Japan: Organising Committee of the 24th International Japan-Korea Seminar on Ceramics.

  • Influence of micro-structure in doped CeO2 solid electrolytes on conducting properties

    Mori, T., Ou, D. R., Ye, F., Zou, J. and Drennan, J. (2007). Influence of micro-structure in doped CeO2 solid electrolytes on conducting properties. Microscopy and Microanalysis 2007, Ft. Lauderdale, Florida, USA, August 5 – August 9, 2007. New York: Cambridge. doi: 10.1017/S1431927607075435

  • Intragranular segregation of dopant cations and ordering of oxygen vacacies in gadolinium-doped ceria

    Ye, F., Mori, T., Ou, D. R., Zou, J. and Drennan, J. (2007). Intragranular segregation of dopant cations and ordering of oxygen vacacies in gadolinium-doped ceria. 16th International Conference on Solid State Ionics, Shanghai Worldfield Convention Hotel (SWCH), 1-6 July, 2007.

  • Ion-beam processing of ZnO

    Kucheyev, S. O., Coleman, V. A., Jagadish, C., Zou, Jin, Williams, J. and Tan, H. H. (2007). Ion-beam processing of ZnO. Optoelectronics 2007, San Jose, CA, USA, 21 January 2007.

  • Nanomechanical properties and nanostructure of CMG and CMP machined Si substrates

    Wang, B., Huang, H., Zou, J. and Zhou, L. (2007). Nanomechanical properties and nanostructure of CMG and CMP machined Si substrates. 8th International Symposium on Measurement Technolgy and Intelligent Instruments, Sendai, Japan, 24-27 September 2007. Japan: Tohoku University.

  • Silicon carbide nanowires synthesized by carbon nanotube template

    Li, B.C. P., Fitzgerald, J., Zou, J. and Chen, Y. (2007). Silicon carbide nanowires synthesized by carbon nanotube template. Materials Today Asia 2007, Beijing, 3-5 September, 2007.

  • Sliding of Au droplet in vapor?liquid?solid growth of semiconductor nanowire heterostructures

    Paladugu, M., Zou, J., Guo, Y. N., Aucherterlonie, G. J., Joyce, H. J., Goa, Q., Tan, H H., Jagadish, C. and Kim, Y. (2007). Sliding of Au droplet in vapor?liquid?solid growth of semiconductor nanowire heterostructures. Nanostructures for Electronics Energy and Environment (NanoE3), Couran Cove, Qld, Australia, 23-28 September, 2007.

  • Strain relaxation in GaSb/GaAs nanowire heterostructures

    Guo, Y.N., Zou, J., Paladugu, M., Gao, Q., Tan2, H.H. and Jagadish, C. (2007). Strain relaxation in GaSb/GaAs nanowire heterostructures. Materials Today Asia, 2007, Beijing, China, 3-5 September, 2007.

  • Structural analysis of nano-sized domains in heavily yttrium doped ceria

    Ou, D. R., Mori, T, Ye, F., Zou, Jin and Drennan, J. (2007). Structural analysis of nano-sized domains in heavily yttrium doped ceria. 16th International Conference on Solid State Ionics, Shanghai, 1 - 6 July 2007.

  • Synthesis and Characterization of GaSb/GaAs Heterostructured Nanowires

    Guo, Yanan, Zou, Jin, Paladugu, Mohanchand, Gao, Qiang, Tan, Hoe H. and Jagadish, Chennupati (2007). Synthesis and Characterization of GaSb/GaAs Heterostructured Nanowires. Symposium JJ: Nanowires--Novel Assembly Concepts and Device Integration, Boston, MA, 26-30 November 2007. Materials Research Society.

  • Synthesis and characterization of K-doped MnO2 nanowires

    Mukherji, A., Wang, L. Z., Zou, J., Auchterlonie, G. J. and Lu, G. Q. (2007). Synthesis and characterization of K-doped MnO2 nanowires. Materials Today Asia 2007, Beijing, China, 3-5 September, 2007.

  • Uniform Mg2Si semiconductor thin films epitaxially grown on Si substrate

    Wang, Y., Zou, J., Wang, X. N., Mei, Z. X., Du, X. L., Xue, Q. K., Jia, J. F., Zhang, X. N. and Zhang, Z. (2007). Uniform Mg2Si semiconductor thin films epitaxially grown on Si substrate. Australian Research for Advanced Materials (ARNAM ) 2007 Annual Workshop, Kioloa, Australia, 8-11 July 2007.

  • A design on nano-hetero strucutre in Dy doped CeO2 solid electrolytes using a combined process of spart plasma sintering and conventional sintering

    Mor, T, Ou, D R, Ye, F, Zou, J and Drennan, J (2006). A design on nano-hetero strucutre in Dy doped CeO2 solid electrolytes using a combined process of spart plasma sintering and conventional sintering. 5th International Conference of Inorganic Materials, Slovenia, 23-26 September 2006. doi: 10.1109/ECODIM.2005.1619380

  • Comparison between the Y-doped ceria and Ho-doped ceria: Electrolytic properties and microstructure

    Ou, D R, MorI, T, Ye, F, Zou, J and Drennan, J (2006). Comparison between the Y-doped ceria and Ho-doped ceria: Electrolytic properties and microstructure. E-MRS Spring Meeting 2006, Nice, France, 20 May - 2 June 2006. OXFORD: PERGAMON-ELSEVIER SCIENCE LTD. doi: 10.1016/j.renene.2007.05.005

  • Conductivity and microstructure of CE1-xTbxO2-8(0.

    Ye, F, Mori, T, Ou, D R, Zou, J and Drennan, J. (2006). Conductivity and microstructure of CE1-xTbxO2-8(0.. E-MRS Spring Meeting 2006, Nice, France, 20 May - 2 June 2006.

  • Effect of over-doped yttrium on the microstructure, mechanical properties and thermal properties of a Zr-based metallic glass

    Yan, Ming, Zou, J. and Shen, J. (2006). Effect of over-doped yttrium on the microstructure, mechanical properties and thermal properties of a Zr-based metallic glass. Micromechanics and Microstructure Evolution: Modeling, Simulation and Experiments, Madrid, Spain, 11–16 September 2005. Amsterdam, Netherlands: Elsevier. doi: 10.1016/j.actamat.2006.03.052

  • GaSb/GaAs nanowire heterostructures grown on GaAs by metalorganic chemical vapor deposition

    Gao, Q., Kim, Y., Tan, H. H., Jagadish, C., Wang, H., Guo, Y. N. and Zou, J. (2006). GaSb/GaAs nanowire heterostructures grown on GaAs by metalorganic chemical vapor deposition. COMMAD 2006, WO-B2, xx, xx.

  • Grain-size dependence of electrolytic properties in 25 at.% Yttrium Doped Ceria Solid Electrolytes

    Ou, D R, Mori, T, Ye, F, Zou, J and Drennan, J (2006). Grain-size dependence of electrolytic properties in 25 at.% Yttrium Doped Ceria Solid Electrolytes. EcoDesign 2005 Fourth International Symposium on Environmentally Conscious Design and Inverse Manufacturing, Japan, 2006. Japan: Union of EcoDesigners. doi: 10.1109/ECODIM.2005.1619373

  • Growth mechanism of truncated triangular GaAs nanowires

    Zou, J., Wang, H., Auchterlonie, G. J., Paladugu, M., Gao, Y. N., Kim, Y., Joyce, H. J., Tan, H. and Jagadish, C. (2006). Growth mechanism of truncated triangular GaAs nanowires. 2006 International Conference on Nanosciences and Nanotechnology (ICONN '06), Brisbane, Australia, 3 - 7 July 2006. Piscataway, NJ, United States: IEEE. doi: 10.1109/ICONN.2006.340690

  • III-V Nanowires Grown by Metal-Organic Chemical Vapor Deposition for Optoelectronics Applications

    Kim, Yong, Joyce, H. J., Gao, Q., Tan, H. H., Jagadish, C., Paladugu, M. and Zou, J. (2006). III-V Nanowires Grown by Metal-Organic Chemical Vapor Deposition for Optoelectronics Applications. 2006 Joint International Meeting, Cancun, Mexico, 29 October - 3 November, 2006.

  • III-V Nanowires grown by metal-organic chemical vapour deposition for optoelectronic applicatins

    Kim, Y., Joyce, H. J., Gao, Q., Tan, H. H., Jagadish, C., Paladugu, M. and Zou, J. (2006). III-V Nanowires grown by metal-organic chemical vapour deposition for optoelectronic applicatins. Mat Res Soc 2006 Fall Meeting, Symposium K: Zinc Oxide and Related Materials, xx, 2006. USA: Mat Res Soc.

  • III-V nanowires for optoelectronics

    Kim, Y., Gao, Q., Joyce, H. J., Tan, H. H., Jagadish, C., Paladugu, M. and Zou, J. (2006). III-V nanowires for optoelectronics. Proceedings of SPIE, xx, 2006. BELLINGHAM: SPIE. doi: 10.1117/12.692715

  • Investigation of SiO2-SiC interface by high-resolution transmission electron microscope

    Dimitriejev, S., Han, J. and Zou, J. (2006). Investigation of SiO2-SiC interface by high-resolution transmission electron microscope. Silicon Carbide and Related Materials 2005, Pittsburgh, PA United States, 2005. Switzerland: Trans Tech Publications. doi: 10.4028/www.scientific.net/msf.527-529.975

  • Microstructure and ionic conductivity of Yb-doped ceria

    Ye, F, Mori, T, Ou, D R, Zou, J and Drennan, J (2006). Microstructure and ionic conductivity of Yb-doped ceria. 16th International Microscopy Congress, Sapporo, Japan,

  • Microstructure of Mm Ni3.5(CoAlMn)1.5/Mg Multi-layers for hydrogen storage

    Ouyang, L Z, Zhu, M and Zou, J (2006). Microstructure of Mm Ni3.5(CoAlMn)1.5/Mg Multi-layers for hydrogen storage. 16th International Microscopy Congress, Sapporo, Japan,

  • Modeling architectural non functional requirements: From use case to control case

    Zou, Joe and Pavlovski, Christopher J. (2006). Modeling architectural non functional requirements: From use case to control case. IEEE International Conference on e-Business Engineering 2006, Shanghai, Peoples Republic of China, 24-26 October 2006. Piscataway, NJ, United States: IEEE. doi: 10.1109/ICEBE.2006.71

  • New crystalline phases formed in a slowly-cooled Zr-based metallic glass

    Zou, J, Yan, M and Shen, (2006). New crystalline phases formed in a slowly-cooled Zr-based metallic glass. 16th International Microscopy Congress, Sapporo, Japan,

  • Relationship between microstructure and ionic conductivity in Ytterbium Doped Ceria

    Ye, F, Mori, T, Ou, D R, Zou, J and Drennan, J (2006). Relationship between microstructure and ionic conductivity in Ytterbium Doped Ceria. EcoDesign 2005 Fourth International Symposium on Environmentally Conscious Design and Inverse Manufacturing, Japan, 2006. Japan: Union of EcoDesigners.

  • Structural materials for NEMS/MEMS devices

    Huang, H., Wu, Q., Winchester, K. J., Suvorova, A., Dell, J. M., Zou, J. and Faraone, L. (2006). Structural materials for NEMS/MEMS devices. 2006 International Conference on Nonoscience and Nanotechnology (ICONN '06), Brisbane, Australia, 3-7 July 2006. Piscataway, NJ, United States: IEEE. doi: 10.1109/ICONN.2006.340717

  • Synthesis and characterization of boron nitride nanowires

    Chen, J., Zou, J., Auchterlonie, G. J. and Chen, Y. (2006). Synthesis and characterization of boron nitride nanowires. 16th International Microscopy Congress, Sapporo, Japan, 2-8 September 2006.

  • Synthesis of silicon carbide nanowires on carbon nanotube template

    Li, B. C. P., Fitzgerald, J., Zou, Jin and Chen, Y. (2006). Synthesis of silicon carbide nanowires on carbon nanotube template. 16th International Microscopy Conference, Sapporo, Japan, 3-8 September 2006.

  • Synthesis of silicon carbide nanowires on carbon nanotube template

    Li, B., FitzGerald, J., Zou, J. and Chen, Y. (2006). Synthesis of silicon carbide nanowires on carbon nanotube template. 2006 International Conference on Nanoscience and Nanotechnology, Brisbane, Australia, 3-7 July 2006. Australia: ARCNN. doi: 10.1109/ICONN.2006.340549

  • TEM study of the microstructures in Y-doped ceria and Ho-doped ceria electrolytes

    Ou, D R, Mori, T, Ye, F, Zou, J and Drennan, J (2006). TEM study of the microstructures in Y-doped ceria and Ho-doped ceria electrolytes. 16th International Microscopy Congress, Sapporo, Japan,

  • The stability of faceted SiGe quantum dotes capped with a Si thin layer

    Wu, Y. Q., Zou, J., LI, F. H., Lin, J. H., Wu, R. W. and Jiang, Z. M. (2006). The stability of faceted SiGe quantum dotes capped with a Si thin layer. 16th International Microscopy Congress, Sapporo, Japan, 3-8 September, 2006.

  • Triangular cross section and sawtooth faceting in GaAs nanowire

    Zou, J., Wang, H., Auchterlonie, G. J., Paladugu, M., Kim, Y., Gao, Q., Joyce, H. J., Tan, H. H. and Jagadish, C. (2006). Triangular cross section and sawtooth faceting in GaAs nanowire. 16th International Microscopy Congress, Sapporo, Japan, 2-8 September 2006.

  • Understanding the kink formation in GaAs/InAs heterostructural nanowires

    Paladugu, M., Zou, J., Wang, H., Auchterlonie, G. J., Kim, Y., Joyce, Hannah J., Gao, Qiang, Tan, Hark Hoe and Jagadish, C. (2006). Understanding the kink formation in GaAs/InAs heterostructural nanowires. International Conference on Nanoscience and Nanotechnology (ICONN, 2006), Brisbane, Australia, 3-7 July 2006. Piscataway, NJ, United States: IEEE. doi: 10.1109/ICONN.2006.340689

  • Relationship between microstructure and ionic conductivity in ytterbium doped ceria

    Ye, Fei, Mori, Toshiyuki, Ou, Ding Kong, Zou, Jin and Drennan, John (2005). Relationship between microstructure and ionic conductivity in ytterbium doped ceria. 4th International Symposium on Environmentally Conscious Design and Inverse Manufacturing, Eco Design 2005, , , December 12, 2005-December 14, 2005. IEEE. doi: 10.1109/ECODIM.2005.1619374

  • Towards p-type doping of ZnO by ion implantation

    Coleman, V. A., Tan, H. H., Jagadish, C., Kucheyev, S. O., Phillips, M. R. and Zou, J. (2005). Towards p-type doping of ZnO by ion implantation. Progress in Compound Semiconductor Materials IV - Electronic and Optoelectronic Applications, , , November 29, 2004-December 3, 2004.

  • Advances in Application of Alloying Additions for Promoting the Glass-Forming Ability of Bulk Metallic Glass

    Shen, J., Ye, L., Lu, Z. P., Zou, J., Chen, Q. J., Yan, M., Sun, J. F. and McCartney, G. (2005). Advances in Application of Alloying Additions for Promoting the Glass-Forming Ability of Bulk Metallic Glass. Bulk Metallic Glass IV, Gatlinburg, Tennessee, 1-5 May, 2005.

  • Effects of the insertion of InAs strain-compensating layers on photoluminescence properties of GaAsN/GaAs quantum-well structures

    Gao, Q., Tan. H. H., Sun, B. Q., Gal, M., Ouyang, L., Zou, J. and Jagadish, C. (2005). Effects of the insertion of InAs strain-compensating layers on photoluminescence properties of GaAsN/GaAs quantum-well structures. Semiconducting and Insulating Materials, Beijing, China, 20 - 25 September, 2004. Piscataway: IEEE. doi: 10.1109/SIM.2005.1511416

  • Influence of micro-structural features on electrolytic properties in Y2O3 doped CeO2 electrolytes

    Ou, D. R., Mori, T., Buchanan, R., Ye, F., Zou, J. and Drennan, J. (2005). Influence of micro-structural features on electrolytic properties in Y2O3 doped CeO2 electrolytes. Solid State Ionics, Baden-Baden, Germany ..., 15 - 22 July, 2005.

  • Ion-beam-defect Processes in ZnO

    Kucheyev, S. O., Coleman, V. A., Jagadish, C., Zou, J. and Williams, J, S. (2005). Ion-beam-defect Processes in ZnO. 13th International Conference on Radiation Effects in Insulators, Santa Fe, New Mexico USA, 28 August - 2 September, 2005.

  • Ionic Conductivity and Microstructure in Ytterbium Doped Ceria Sintered Bodies

    Ye, F., Mori, T., Ou, D. R., Takahashi, M., Zou, J. and Drennan, J. (2005). Ionic Conductivity and Microstructure in Ytterbium Doped Ceria Sintered Bodies. 4th International Conference on Materials Processing for Properties and Performance (MP3 2005), International Congress Center “Epochal Tsukuba”, Japan, 30 November - 2 December, 2005.

  • Microstructural Features in Y-doped Ce02 Electrolytes

    Ou, D. R., Mori, T., Ye, F., Zou, J. and Drennan, J. (2005). Microstructural Features in Y-doped Ce02 Electrolytes. 4th International Conference on Materials Processing for Properties and Performance (MP3 2005), nternational Congress Center “Epochal Tsukuba”, Japan, 30 November-2 December, 2005.

  • Towards p-type doping of ZnO by ion implantation

    Coleman, V. A., Tan, H. H., Jagadish, C., Kucheyev, O., Zou, J. and Phillips, M.R. (2005). Towards p-type doping of ZnO by ion implantation. The 18th Annual Meeting of the IEEE Lasers and Electric Optics Society, Hilton Sydney, Sydney, Australia, 22-28 October, 2005. Institute of Electrical and Electronics Engineers Inc.. doi: 10.1109/LEOS.2005.1548273

  • Towards p-type doping of ZnO by ion implantation

    Coleman, VA, Tan, HH, Jagadish, C, Kucheyev, SO, Phillips, MR and Zou, J (2005). Towards p-type doping of ZnO by ion implantation. Symposium on Progress in Compound Semiconductor Materials IV held at the 2004 MRS Fall Meeting, Boston Ma, Nov 29-Dec 03, 2004. WARRENDALE: MATERIALS RESEARCH SOC.

  • Towards p-type doping of ZnO by ion implantation

    Coleman, VA, Tan, HH, Jagadish, C, Kucheyev, SO, Zou, J and Phillips, MR (2005). Towards p-type doping of ZnO by ion implantation. 18th Annual Meeting of the IEEE-Lasers-and-Electro-Optical-Society, Sydney Australia, Oct 22-28, 2005. NEW YORK: IEEE.

  • Effects of the insertion of InAs strain-compensating layers on photoluminescence properties of GaAsN/GaAs quantum-well structures

    Gao, Q, Tan, HH, Sun, BQ, Gal, M, Ouyang, L, Zou, J and Jagadish, C (2004). Effects of the insertion of InAs strain-compensating layers on photoluminescence properties of GaAsN/GaAs quantum-well structures. 13th International Conference on Semiconducting and Insulating Materials (SIMC XIII), Beijing Peoples R China, Sep 20-25, 2004. NEW YORK: IEEE.

  • Lattice Disorder Produced in GaN by Irradation with Swift Heavy Ions

    Kucheyev, S. O., Timmers, H., Zou, J., Williams, J. S., Jagadish, C. and Li, G. (2004). Lattice Disorder Produced in GaN by Irradation with Swift Heavy Ions. 14th International Conference on Ion Beam Modification of Materials (IBMM 2004), Monterey, California, USA, 5–10 September, 2004.

  • Nanoanalysis of novel dopants in oxygen ion conductors

    Auchterlonie, G.J., Drennan, J. and Zou, J. (2004). Nanoanalysis of novel dopants in oxygen ion conductors. ACEM-18, Geelong, Australia, 31 January- 6 February 2004.

  • Towards p-Type Doping of ZnO by Ion Implantation

    Coleman, V. A., Tan, H. H., Jagadish, C., Kucheyev, S. O., Phillips, M. R. and Zou, Jin (2004). Towards p-Type Doping of ZnO by Ion Implantation. Materials Research Society 2004 Fall Meeting (MRS), Boston, 29 Nov - 3 Dec 2004. Materials Research Society.

  • Atomic level structural modification in mono-crystalline silicon during nano-machining

    Zarudi, I., Cheong, W. C. D., Zou, J. and Zhang, L. C. (2003). Atomic level structural modification in mono-crystalline silicon during nano-machining. Intelligent Processing and Manufacturing of Material, Sendai, Japan, 18-23 May 2003.

  • Dynamic annealing in group-III nitrides under ion irradiation

    Kucheyev, S. O., Williams, J. S., Jagadish, C. and Zou, J. (2003). Dynamic annealing in group-III nitrides under ion irradiation. Symposium R:Radiation Effects and Ion Beam Processing of Materials, Boston, MA, 1 - 5 December, 2003.

  • Exploring Nanomaterials Using Advanced Transmission Electron Microscopy

    Zou, J. (2003). Exploring Nanomaterials Using Advanced Transmission Electron Microscopy. Asia Pacific Nanotechnology Forum, Cairns, Australia, 19 - 21 November, 2003. N.J.: World Scientific.

  • Ion implantation of ZnO: opportunities and challenges

    Kucheyev, S. O., Williams, J. S., Jagadish, C., Zou, J., Evans, C., Nelson, A. J., Hamza, A. V. and Livermore, Laurence (2003). Ion implantation of ZnO: opportunities and challenges. Symposium Z: Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications, Boston, MA, 1 - 5 Decmeber, 2003.

  • Nature of planar defects in ion-implanted GaN

    Zou, J., Wang, Y. G., Kucheyev, S. O., Williams, J. S., Jagadish, C. and Li, G. (2003). Nature of planar defects in ion-implanted GaN. The Internalional Beijing Conference and Exhibition on Instrumental Analysis (BCEIA), Beijing, China, 13- 16 October, 2003. Pennington, NJ: The Electrochemical Society. doi: 10.1149/1.1541257

  • Strain Relaxation Mechanisms in Coherent and Incoherent Ge(Si)/Si Islands

    Zou, Jin, Liao, Xiaozhou, Cockayne, David J. H. and Jiang, Zuimin (2003). Strain Relaxation Mechanisms in Coherent and Incoherent Ge(Si)/Si Islands. Cambridge University Press. doi: 10.1017/S1431927603442360

  • Strain relaxation in epitaxial self-assembled Ge(Si)/Si islands

    Zou, J., Liao, X. Z. and Cockayne, D. J. H. (2003). Strain relaxation in epitaxial self-assembled Ge(Si)/Si islands. nternational Beijing Conference and Exhibition on Instrumental Analysis, Beijing, China, 13 - 16 October, 2003.

  • Strain relaxation in self-assembled Ge(Si)/Si quantum dots

    Zou, J., Liao, X. Z., Cockayne, D.J.H. and Jiang, Z. M. (2003). Strain relaxation in self-assembled Ge(Si)/Si quantum dots. Advanced Nanomaterials and Nanodevices, China, 10 - 14 June, 2002.

  • TEM investigations of the compositions in Ge(Si)/Si(001) quantum dots

    Liao, X. Z., Zou, J. and Cockayne, D. J. H. (2003). TEM investigations of the compositions in Ge(Si)/Si(001) quantum dots. VII InterAmerican Congress on Electron Microscopy, San Antonio, Texas, 3 - 7 August, 2003. New York, N.Y. U.S.A.: Microscopy Society of America. doi: 10.1017/s143192760344213x

  • 314 HRTEM Studies of Plastic Deformation in Silicon Wafers due to Micro Indentation

    Zarudi, I., Zou, J. and Zhang, L (2002). 314 HRTEM Studies of Plastic Deformation in Silicon Wafers due to Micro Indentation. Materials Processing, Honolulu, Hawaii, 14 - 18 October, 2002.

  • Atomistic structure changes in monocrystalline silicon during nano-sliding and nano-indentation

    Zarudi, I., Zou, J. and Zhang, L. C. (2002). Atomistic structure changes in monocrystalline silicon during nano-sliding and nano-indentation. 10th Foresight Conference on Molecular Nanotechnology, Bethesda, Washington, USA, 11-13 October, 2002. Online: Foresight Institute.

  • Composition distributions in Ge(Si)/Si(001) quantum dots

    Liao, X. Z., Zou, J. and Cockayne, David J. H. (2002). Composition distributions in Ge(Si)/Si(001) quantum dots. 15th International Congress on Electron Microscopy (ICEM), Durban, South Africa, 1-6 September, 2002.

  • Formation of misfit dislocations form island surface in Ge(Si)/Si quantum dots

    Zou, J. (2002). Formation of misfit dislocations form island surface in Ge(Si)/Si quantum dots. COMMAD 2002, Sydney, Australia, 11-13 December, 2002. Piscataway: IEEE.

  • Growth and characterization of GaAsN epilayer and (In)GaAsN qutantum-well structure

    Gao, Q., Tan, H. H., Jagadish, C., Sun, B. Q., Gal, M., Ouyang, L. and Zou, J. (2002). Growth and characterization of GaAsN epilayer and (In)GaAsN qutantum-well structure. Optoelectronic and Microelecttronic Materials and Devices, University of Sydney, NSW, Australia, 11 - 13 December, 2002. NEW YORK: Institute of Electrical and Electronics Engineers. doi: 10.1109/COMMAD.2002.1237238

  • Microstructure and optical properties of Ge(Si) dots grown on Si

    Wan, Jun, Tong, Song, Jiang, Zhimei, Jin, Gaolong, Lou, Y. H., Liu, Jian-Lin, Liao, Xiaozhou, Zou, Jin and Wang, Kang L. (2002). Microstructure and optical properties of Ge(Si) dots grown on Si. Quantum Dot Devices and Computing, San Jose, CA, USA, 21 January, 2002. BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING. doi: 10.1117/12.460806

  • Strain relaxation in self-assembled Ge(Si)/Si quantum dots

    Zou, J., Liao, X. Z. and Cockayne, D. J. H. (2002). Strain relaxation in self-assembled Ge(Si)/Si quantum dots. 15th International Congress on Electron Microscopy, Durban, South Africa, 1-6 September 2002. Onderstepoort, South Africa: Microscopy Society of Southern Africa.

  • Structural electrical and optical properties of MeV ion implanted InP

    Carmody, C., Tan, H. H., Jagadish, C., Zou, J., Dao, L. and Gal, M. (2002). Structural electrical and optical properties of MeV ion implanted InP. Optoelectronic and Microelecttronic Materials and Devices, Sydney, 9 - 113 December, 2002. NEW YORK: IEEE. doi: 10.1109/COMMAD.2002.1237296

  • Composition distribution in Ge(Si) islands grown on Si (001) substrate

    Zou, J., Liao, X. Z. and Cockayne, D. J. H. (2000). Composition distribution in Ge(Si) islands grown on Si (001) substrate. COMMAD 2002: Optoelectronic and Microelectronic Materials and Devices, Sydney, Australia, 11-13 December, 2000.

  • HREM investigation of planar defects in ion-implanted GaN

    Zou, J., Wang, Y. G., Kucheyev, S. O., Williams, J. S., Jagadish, C. and Li, G. (2000). HREM investigation of planar defects in ion-implanted GaN. COMMAD 2002: Optoelectronic and Microelectronic Materials and Devices, Sydney, Australia, 11-13 December, 2000.

  • Ion implantation into GaN: Opportunities and problems

    Kucheyev, SO, Williams, JS, Jagadish, C, Zou, J, Toth, M, Phillips, MR and Li, G (2000). Ion implantation into GaN: Opportunities and problems. 11th International Semiconducting and Insulating Materials Conference (SIMC-XI), Canberra Australia, Jul 03-07, 2000. NEW YORK: IEEE.

  • Ion-implanted GaAs for ultrafast saturable absorber applications

    Lederer, MJ, Luther-Davies, B, Tan, HH, Jagadish, C, Haiml, M, Siegner, U, Keller, U, Zou, J and Cockayne, DJH (2000). Ion-implanted GaAs for ultrafast saturable absorber applications. 11th International Semiconducting and Insulating Materials Conference (SIMC-XI), Canberra Australia, Jul 03-07, 2000. NEW YORK: IEEE. doi: 10.1109/SIM.2000.939213

  • Transmission electron microscopy investigation of semiconductor quantum dots

    Liao, XZ, Zou, J and Cockayne, DJH (2000). Transmission electron microscopy investigation of semiconductor quantum dots. 11th International Semiconducting and Insulating Materials Conference (SIMC-XI), Canberra Australia, Jul 03-07, 2000. NEW YORK: IEEE. doi: 10.1109/SIM.2000.939230

  • Island shape instabilities and surfactant-like effects in the growth of InGaAs/GaAs quantum dots

    Leon, R, Lobo, C, Liao, XZ, Zou, J, Cockayne, DJH and Fafard, S (1999). Island shape instabilities and surfactant-like effects in the growth of InGaAs/GaAs quantum dots. Symposium on Growth Instabilities and Decomposit ion During Heteroepitaxy at the MRS Fall Meeting, Boston Massachusetts, Dec, 1998. LAUSANNE: Elsevier Sequoia SA. doi: 10.1016/S0040-6090(99)00472-1

  • Transmission electron microscopy study of InGaAs/GaAs structural evolution near the Stranski-Krastanow transformation

    Wellman, J, George, T, Leon, R, Fafard, S, Zou, J and Cockayne, DJH (1999). Transmission electron microscopy study of InGaAs/GaAs structural evolution near the Stranski-Krastanow transformation. Symposium on Epitaxial Growth-Principles and Applications, San Francisco Ca, Apr 05-08, 1999. WARRENDALE: MATERIALS RESEARCH SOCIETY. doi: 10.1557/PROC-570-175

  • On-zone axis electron diffraction contrast study of the size of InGaAs/GaAs quantum dots

    Liao, XZ, Zou, J, Cockayne, DJH, Anstis, GR and Leon, R (1998). On-zone axis electron diffraction contrast study of the size of InGaAs/GaAs quantum dots. 14th International Congress on Electron Microscopy, Cancun Mexico, Aug 31-Sep 04, 1998. BRISTOL: IOP PUBLISHING LTD.

  • Ordering, tunability, and stability in the formation of semiconductor quantum dots

    Leon, R, Stevens-Kalceff, M, Zou, J, Lobo, C and Cockayne, DJH (1998). Ordering, tunability, and stability in the formation of semiconductor quantum dots. 14th International Congress on Electron Microscopy, Cancun Mexico, Aug 31-Sep 04, 1998. BRISTOL: IOP PUBLISHING LTD.

  • Oval defects in InGaAs/GaAs heterostructures

    Russell-Harriott, J. J., Zou, J., Moon, A. R., Cockayne, D. J. H. and Usher, B. F. (1998). Oval defects in InGaAs/GaAs heterostructures. 14th International Congress on Electron Microscopy, Cancun, Mexico, 31 August - 4 September 1998. BRISTOL: IOP PUBLISHING LTD.

  • TEM investigations of Si ion-implanted GaN

    Zou, J., Cockayne, D. J. H., Duan, X. F., Tan, H. H., Williams, J. S., Pearton, S. J. and Stall, S. A. (1998). TEM investigations of Si ion-implanted GaN. 14th International Congress on Electron Microscopy, Cancún, Mexico, 31 August-4 September 1998. Bristol ; Philadelphia: Institute of Physics Publishing.

  • TEM study of compositional profile in AlGaAs/GaAs quantum wells

    Zou, J., Cai, D. Q., Cockayne, D. J. H. and Jagadish, C. (1998). TEM study of compositional profile in AlGaAs/GaAs quantum wells. 14th International Congress on Electron Microscopy, Cancun Mexico, 31 August - 4 September 1998. BRISTOL: IOP PUBLISHING LTD.

  • TEM study of intermetallic phases in 55Al-Zn coatings

    Zou, J, Liao, XZ, Duan, XF, Durandet, Y and Cockayne, DJH (1998). TEM study of intermetallic phases in 55Al-Zn coatings. 14th International Congress on Electron Microscopy, Cancun Mexico, Aug 31-Sep 04, 1998. BRISTOL: IOP PUBLISHING LTD.

  • Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs

    Russellharriott, J. J., Zou, J., Cockayne, D. J. H., Moon, A. R. and Usher, B. F. (1997). Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs. 1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9), Canberra, Australia, 8-11 December 1996. Piscataway, NJ, United States: IEEE. doi: 10.1109/COMMAD.1996.610091

  • Misfit dislocations nucleated from the surface in strained-layer heterostructures

    Cockayne, D. J. H. and Zou, J. (1997). Misfit dislocations nucleated from the surface in strained-layer heterostructures. Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD 96, Canberra, Australia, 8-11 December 1996. New York ; Piscataway, NJ: Institute of Electrical and Electronic Engineers : IEEE Service Center,. doi: 10.1109/COMMAD.1996.610129

  • The effect of ion-implantation induced defects on strain relaxation in GexSi1-x/Si heterostructures

    Glasko, JM, Zou, J, Cockayne, DJH, Gerald, JF, Kringhoj, P and Elliman, RG (1997). The effect of ion-implantation induced defects on strain relaxation in GexSi1-x/Si heterostructures. Symposium on Defects in Electronic Materials II, at the Combined Meeting of the Materials-Research-Society / International Conference on Electronic Materials, Boston Ma, Dec 02-06, 1996. WARRENDALE: MATERIALS RESEARCH SOCIETY.

  • {111} and {311} rod-like defects in silicon ion implanted silicon

    Chou, C. T., Cockayne, D. J. H., Zou, J., Kringhøj, P. and Jagadish, C (1997). {111} and {311} rod-like defects in silicon ion implanted silicon. 1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9), Canberra, Australia, 8-11 December 1996. NEW YORK: I E E E. doi: 10.1109/COMMAD.1996.610131

  • Ion implantation processing of GaN epitaxial layers

    Tan, HH, Williams, JS, Zou, J, Cockayne, DJH, Pearton, SJ and Yuan, C (1996). Ion implantation processing of GaN epitaxial layers. 1st ECS Symposium on III-V Nitride Materials and Processes, Los Angeles Ca, May 06-08, 1996. PENNINGTON: ELECTROCHEMICAL SOCIETY INC.

  • Strain relief and interfacial structure in ZnSe layers grown on GaAs substrates

    Zhang, Y, Usher, BF, Riley, JD, Huang, , Zou, J, Leckey, RCG and Wolfframm, D (1996). Strain relief and interfacial structure in ZnSe layers grown on GaAs substrates. 1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9), Canberra Australia, Dec 08-11, 1996. NEW YORK: I E E E. doi: 10.1109/COMMAD.1996.610154

  • The effect of irradiation temperature on post-irradiation strain levels in GexSi1-x/Si strained layer heterostructures

    Glasko, JM, Zou, J, Cockayne, DJH, Gerald, JF and Elliman, RG (1996). The effect of irradiation temperature on post-irradiation strain levels in GexSi1-x/Si strained layer heterostructures. 1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9), Canberra Australia, Dec 08-11, 1996. NEW YORK: I E E E. doi: 10.1109/COMMAD.1996.610092

  • V-grooved GaAs/AlGaAs quantum wires with side wall quantum wells intermixed by pulsed anodization and rapid thermal annealing

    Kim, Y, Yuan, S, Leon, R, Clark, A, Jagadish, C, Johnston, MB, Burke, P, Gal, M, Zou, J, Cockayne, D, Phillips, MR and Kalceff, MAS (1996). V-grooved GaAs/AlGaAs quantum wires with side wall quantum wells intermixed by pulsed anodization and rapid thermal annealing. 1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9), Canberra Australia, Dec 08-11, 1996. NEW YORK: I E E E. doi: 10.1109/COMMAD.1996.610106

  • Misfit dislocation generation from dissociated threading dislocations in strained-layer heterostructures

    Zou, J. and Cockayne, D. J. H. (1995). Misfit dislocation generation from dissociated threading dislocations in strained-layer heterostructures. 2nd International Conference on the Role of Interfaces in Advanced Materials Design, Processing and Performance, Ballarat, Australia, 1-5 November 1993. Switzerland, Germany: Trans Tech Publications. doi: 10.4028/www.scientific.net/MSF.189-190.279

  • TEM studies of misfit dislocations in strained-layer heterostructures

    Zou, J and Cockayne, Djh (1994). TEM studies of misfit dislocations in strained-layer heterostructures. 13th International Congress on Electron Microscopy, Paris France, Jul 17-22, 1994. LES ULIS: MATERIALS RESEARCH SOCIETY.

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